![]() ![]() The results show that the parameters of the ν-region greatly influenced on the distribution of the electric field and the generation rate due to the impact ionization. This paper describes the results of research aimed at investigation of the impact ionization mechanism in HgCdTe N +-ν-p-P + photodiode optimized for 8 μm cut-off wavelength at 230 K. N +-ν-p-P + photodiode meets the requirements of the separated absorption and multiplication regions. HgCdTe is an almost ideal material for avalanche photodiodes, however to achieve the highest performance in near-room temperatures, a careful design of device structure is needed, to reach the highest performance in near-room temperatures. This process is used in avalanche photodiodes enabling individual photons to be detected when the incident flux of light is very low. If the impact ionization occurs in a region of high electrical field then it can result in avalanche multiplication of carriers.
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